TPCC8104 mosfet equivalent, silicon p-channel mosfet.
(1) (2) (3) (4) Small footprint due to a small and thin package Low drain-source on-resistance: RDS(ON) = 6.8 mΩ (typ.) (VGS = -10 V) Low leakage current: IDSS = -10 µA (.
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2. Features
(1) (2) (3) (4) Small footprint due t.
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